I-High-Current Film Capacitor Snubber yomshini wokushisela (SMJ-TC)

Isithombe Esivelele Se-High-Current Film Capacitor Snubber Yomshini Wokushisela (SMJ-TC)

Incazelo emfushane:

Imodeli ye-Capacitor: SMJ-TC

Izici:

1. Ama-electrode e-Copper nuts

2. Usayizi omncane obonakalayo kanye nokufakwa okulula

3. Ubuchwepheshe bokugoqa i-Mylar tape

4. Ukugcwaliswa kwe-resin eyomile

5. I-Low Equivalent Series Inductance (ESL) kanye ne-Equivalent Series Resistance (ESR)

Izicelo:

1. I-GTO Snubber

2. I-Peak Voltage kanye ne-Peak Current Absorption kanye ne-Protection ye-Switching Component ku-Electronic Equipment

Amasekethe okushisa abalulekile kuma-diode asetshenziswa kumasekethe okushintsha. Kungasindisa i-diode ekukhuphukeni kwamandla kagesi, okungase kuvele ngesikhathi senqubo yokutakula emuva.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Idatha yobuchwepheshe

Ibanga lokushisa lokusebenza	Ukushisa okuphezulu. Okuphezulu, okuphezulu: + 85℃ Ukushisa okuphezulu kwesigaba: +85℃ Ukushisa okuphansi kwesigaba: -40℃
ububanzi bomthamo	0.22～3μF
I-voltage elinganisiwe	3000V.DC～10000V.DC
I-Cap.tol	±5%(J) ;±10%(K)
Melana ne-voltage	1.35Un DC/10S
Isici sokushabalalisa	tgδ≤0.001 f=1KHz
Ukumelana nokushisa	C≤0.33μF RS≥15000 MΩ (ku-20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (ku-20℃ 100V.DC 60S)
Melana nomugqa wamanje wokushaya	bheka ishidi ledatha
Isikhathi sokuphila	100000h(Un; Θhotspot≤70°C)
Izinga elijwayelekile lokubhekisela	I-IEC 61071;

Isici

1. Itheyiphu ye-Mylar, Evalwe nge-resin;

2. Ama-lead e-copper nut;

3. Ukumelana ne-voltage ephezulu, i-tgδ ephansi, ukukhuphuka kwezinga lokushisa eliphansi;

4. i-ESL ne-ESR ephansi;

5. Ukushaya kwenhliziyo okuphezulu.

Isicelo

1. I-GTO Snubber.

2. Isetshenziswa kabanzi kumishini kagesi yamandla lapho i-voltage ephezulu ifinyelela phezulu, ukuvikelwa kokumuncwa kwamanje okuphezulu.

Isekethe evamile

Umdwebo wohlaka

Imininingwane

Un=3000V.DC
Umthamo (μF)	φD (mm)	L(mm)	I-L1(mm)	I-ESL(nH)	i-dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Umthamo (μF)	φD (mm)	L(mm)	I-L1(mm)	I-ESL(nH)	i-dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

I-Un=7000V.DC
Umthamo (μF)	φD (mm)	L(mm)	I-L1(mm)	I-ESL(nH)	i-dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

I-Un=8000V.DC
Umthamo (μF)	φD (mm)	L(mm)	I-L1(mm)	I-ESL(nH)	i-dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Umthamo (μF)	φD (mm)	L(mm)	I-L1(mm)	I-ESL(nH)	i-dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70