I-power electronic film capacitor esetshenziselwa ukuguqulwa kwamandla

I-Power electronic capacitor yefilimu esetshenziselwa ukuguqulwa kwamandla Isithombe esifakiwe

Incazelo emfushane:

I-CRE ikhiqiza izinhlobo ezilandelayo zama-capacitor kagesi:

Ifilimu yepulasitiki eyenziwe ngensimbi ye-MKP, icwecwe, ilahlekelwe kancane.Wonke ama-capacitor ayaziphilisa ngokwawo, okungukuthi ukwehla kwamandla kagesi kuyaphola endabeni yama-microseconds ngakho-ke akukhiqizi isekethe emfushane.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Manje sinochwepheshe, abasebenzi bokusebenza ukuletha umhlinzeki wekhwalithi ephezulu kumakhasimende ethu.Sivamise ukulandela inkambiso yekhasimende, imininingwane egxile ku-Power electronic film capacitor esetshenziselwa ukuguqulwa kwamandla, Sithemba ngobuqotho ukunquma ukusebenzelana okwanelisayo nawe endaweni yesikhathi eside.Sizokwazisa ngenqubekelaphambili yethu futhi uhlale ulindele ukwakha ubudlelwano obuzinzile bamabhizinisi amancane kanye nawe.
Manje sinochwepheshe, abasebenzi bokusebenza ukuletha umhlinzeki wekhwalithi ephezulu kumakhasimende ethu.Ngokuvamile silandela inkambiso yokuthambekela kwamakhasimende, egxile kumininingwaneamandla ifilimu capacitor, Ngaphezu kweminyaka engama-26, Izinkampani ezingochwepheshe ezivela emhlabeni wonke zisithatha njengabalingani bazo besikhathi eside futhi abazinzile.Besilokhu sigcina ubudlelwano bebhizinisi obuqinile nabathengisi bezitolo abangaphezu kuka-200 eJapan, Korea, USA, UK, Germany, Canada, France, Italian, Poland, South Africa, Ghana, Nigeria njll.

Idatha yobuchwepheshe

Ibanga lokushisa elisebenzayo	Izinga lokushisa eliphezulu.,Phezulu,ubukhulu: +85℃ Izinga lokushisa lesigaba esiphezulu:+70℃ Izinga lokushisa eliphansi lesigaba: -40 ℃
ububanzi be-capacitance	50μF～4000μF
I-voltage elinganiselwe	450V.DC～4000V.DC
I-Capacitance tolorance	±5%(J);±10%(K)
Melana ne-voltage	I-Vt-t	1.5Un DC/60S
	Vt-c	1000+2×Un/√2 (V.AC) 60S(min3000 V.AC)
I-Over Voltage	1.1Un(30% wokulayisha ngesikhathi.)
	1.15Un(30min/ngosuku)
	1.2Un(5min/ngosuku)
	1.3Un(1 iminithi/ngosuku)
	1.5Un(100ms njalo, izikhathi eziyi-1000 ngesikhathi sokuphila)
Isici sokulahla	Tgδ≤0.003 f=100Hz
	tgδ0≤0.0002
Ukumelana ne-insulation	Rs*C≥10000S (at20℃ 100V.DC 60s)
Ukuvinjelwa komlilo	I-UL94V-0
Ubukhulu bendawo	3500m
	Lapho ukuphakama kungaphezu kuka-3500m kuya ku-5500m, kuyadingeka ukuthi kubhekwe ukusetshenziswa kwenani elincishisiwe.(ngokunyuka ngakunye kwe-1000m, amandla kagesi kanye namanje azokwehliswa ngo-10%)
Iminyaka yokuphila	100000h(Un; Θhotspot≤70 °C)
Izinga lesithenjwa	I-IEC61071 ;GB/T17702;

Isici

1. Ifilimu yepulasitiki eyenziwe ngensimbi;

2. Umklamo ohlangene;

3. Ubuchwepheshe bohlobo olomile;

4. Ukuziphilisa;

5. Ukulahlekelwa okuphansi, isikhathi eside sokuphila;

Isicelo

1. Isiguquli Samandla;
2. Isihlungi samandla asebenzayo;
3. EV & HEV imoto;
4. Umshini wokushaja;
5. Imishini yezokwelapha;
6. Ukuzishintsha kwezimboni;

Iminyaka yokuphila

Umdwebo wohlaka

ΦD(mm)	P(mm)	H1(mm)	S	F	M
76	32	20	M12×16	M6×10	M8×20
86	32	20	M12×16	M6×10	M8×20
96	45	20	M12×16	M6×10	M8×20
116	50	22	M12×16	M6×10	M8×20
136	50	30	M16×25	M6×10	M8×20

Amandla kagesi	450V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo (Kg)
380	76	75	50	10	3.8	11.4	45	2.2	4.5	32	0.5
500	76	100	40	8	4.0	12.0	65	1.5	3.2	32	0.6
750	76	130	50	5	3.8	11.3	65	1.6	3.0	32	0.75
500	86	75	50	8	4.0	12.0	55	1.8	3.7	32	0.8
1000	86	130	50	5	5.0	15.0	70	1.5	2.7	32	1.1
650	86	100	40	5	3.3	9.8	75	1.2	3.0	32	0.9
650	86	95	40	5	3.3	9.8	75	1.2	3.0	32	0.85
650	96	75	50	5	3.3	9.8	60	1.5	3.7	45	0.75
1250	96	130	50	4	5.0	15.0	80	1	3.1	45	1.2
1800	116	130	50	4	7.2	21.6	85	0.8	3.5	50	1.6
1450	86	190	60	4	5.8	17.4	90	0.9	2.7	32	1.55
2700	116	190	60	3	8.1	24.3	100	0.8	2.5	50	2.45

Amandla kagesi	600V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo (Kg)
250	76	75	40	15	3.8	11.3	40	3.1	4.0	32	0.5
320	76	100	40	10	3.2	9.6	40	2.2	5.7	32	0.6
470	76	130	45	12	5.6	16.9	60	1.8	3.1	32	0.75
330	86	75	40	15	5.0	14.9	45	2.4	4.1	32	0.8
600	86	120	45	12	7.2	21.6	60	1.3	4.3	32	1.05
650	86	130	50	12	7.8	23.4	70	1.2	3.4	32	1.1
650	86	95	50	15	9.8	29.3	65	1.2	3.9	32	0.85
1000	86	180	50	12	12.0	36.0	70	1.5	2.7	32	1.5
420	96	75	45	15	6.3	18.9	50	2	4.0	45	0.75
800	96	130	60	12	9.6	28.8	75	1.5	2.4	45	1.2
950	116	100	60	10	9.5	28.5	90	1.2	2.1	50	1.25
1200	116	130	70	8	9.6	28.8	80	1.2	2.6	50	1.6
1800	116	180	50	8	14.4	43.2	80	1.2	2.6	50	2.4
2700	116	260	70	5	13.5	40.5	100	0.9	2.2	50	3.2
2500	136	180	60	5	12.5	37.5	100	0.8	2.5	50	3.7
3750	136	260	70	4	15.0	45.0	115	0.7	2.2	50	4.7

Amandla kagesi	700V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
200	76	75	40	15	3.0	9.0	40	4	3.1	32	0.5
400	76	130	45	15	6.0	18.0	60	2	2.8	32	0.75
420	76	130	50	15	6.3	18.9	60	2	2.8	32	0.75
600	86	125	60	15	9.0	27.0	45	3.2	3.1	32	1.05
550	86	130	50	12	6.6	19.8	65	1.8	2.6	32	1.1
680	96	130	45	12	8.2	24.5	75	1.5	2.4	45	1.2
720	96	125	60	12	8.6	25.9	55	2.6	2.5	45	1.15
1000	116	130	50	10	10.0	30.0	80	1	3.1	50	1.6
1000	96	180	60	10	10.0	30.0	75	1.2	3.0	45	1.6
1500	116	180	60	7	10.5	31.5	85	0.9	3.1	50	2.4
2000	116	230	70	7	14.0	42.0	85	0.8	3.5	50	3
2000	136	180	60	7	14.0	42.0	90	0.75	3.3	50	3.7
3000	136	230	70	5	15.0	45.0	100	0.7	2.9	50	4.2
3300	136	260	70	5	16.5	49.5	120	0.6	2.3	50	4.7

Amandla kagesi	800V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo (Kg)
110	86	80	45	20	2.2	6.6	75	2	1.8	32	0.8
150	86	95	45	20	3.0	9.0	80	1.5	2.1	32	0.85
250	86	75	45	15	3.8	11.3	45	3.1	3.2	32	0.8
360	86	130	55	12	4.3	13.0	65	2.2	2.2	32	1.1
470	86	130	45	12	5.6	16.9	70	2.8	1.5	32	1.1
600	96	130	55	10	6.0	18.0	75	2.2	1.6	45	1.2
730	86	180	55	10	7.3	21.9	70	1.8	2.3	32	1.5
750	86	180	55	12	9.0	27.0	75	1.8	2.0	32	1.5
1000	96	180	60	10	10.0	30.0	75	1.3	2.7	45	1.6
900	116	130	65	7	6.3	18.9	80	1.4	2.2	50	1.6
1400	116	180	65	7	9.8	29.4	80	0.9	3.5	50	2.4
1000	116	125	60	7	7.0	21.0	70	1.4	2.9	50	1.55
2000	116	230	65	5	10.0	30.0	85	0.9	3.1	50	3
2800	136	230	70	5	14.0	42.0	100	0.8	2.5	50	4.2

Amandla kagesi	900V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo (Kg)
160	76	75	40	15	3.0	9.0	35	3	5.4	32	0.5
320	76	130	50	15	5.0	14.9	60	3.2	1.7	32	0.75
350	76	125	50	15	5.0	15.0	40	2.8	4.5	32	0.75
210	86	75	40	15	3.2	9.5	40	2.2	5.7	32	0.8
450	86	125	45	12	5.4	16.2	50	2.7	3.0	32	1.1
420	86	130	45	12	5.0	15.1	65	2.5	1.9	32	1.1
490	86	120	45	10	4.9	14.7	70	1.8	2.3	32	1.05
510	86	120	45	10	5.1	15.3	70	1.8	2.3	32	1.05
660	86	180	50	10	6.6	19.8	70	2	2.0	32	1.5
900	86	230	50	10	9.0	27.0	65	2.1	2.3	32	1.8
580	96	125	50	10	5.8	17.4	55	3.3	2.0	45	1.2
540	96	130	50	7	3.8	11.3	75	1.5	2.4	45	1.2
630	116	100	55	7	4.4	13.2	60	2	2.8	50	1.3
860	116	125	55	7	6.0	18.1	60	2.2	2.5	50	1.55
810	116	130	60	7	5.7	17.0	80	1.2	2.6	50	1.6
1250	116	180	60	7	8.8	26.3	80	1.2	2.6	50	2.4
1700	116	230	60	5	8.5	25.5	80	1.1	2.8	50	3
1700	136	180	65	6	10.2	30.6	100	0.9	2.2	50	3.7
2400	136	230	70	5	12.0	36.0	100	0.95	2.1	50	4.2

Amandla kagesi	1100V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
130	76	75	40	15	1.9	5.6	35	4.5	3.6	32	0.5
260	76	130	45	15	3.8	11.3	60	2.8	2.0	32	0.75
280	76	125	50	12	3.3	9.9	35	4	4.1	32	0.75
170	86	75	50	15	2.6	7.7	45	5	2.0	32	0.8
360	86	125	55	12	4.3	13.0	35	2.5	6.5	32	1.1
330	86	130	45	15	5.0	15.0	65	2.8	1.7	32	1.1
420	86	136	45	12	5.0	15.0	60	2	2.8	32	1.15
420	86	155	45	12	5.0	15.0	65	1.5	3.2	32	1.25
470	86	180	60	10	4.7	14.1	70	1.8	2.3	32	1.5
500	86	180	60	10	5.0	15.0	70	1.8	2.3	32	1.5
600	86	225	60	10	6.0	18.0	80	1.2	2.6	32	1.8
600	86	225	70	10	6.0	18.0	60	2.2	2.5	32	1.8
600	116	130	50	10	6.0	18.0	75	1.8	2.0	50	1.6
680	86	225	70	12	8.2	24.5	65	2.5	1.9	32	1.8
720	86	230	70	12	8.6	25.9	65	2.5	1.9	32	1.8
460	96	125	65	10	4.6	13.8	55	3.2	2.1	45	1.2
520	96	180	65	12	6.2	18.7	75	1.5	2.4	45	1.6
500	116	100	70	10	5.0	15.0	55	2.5	2.6	50	1.3
680	116	125	70	10	6.8	20.4	60	2.8	2.0	50	1.6
650	116	130	75	10	6.5	19.5	75	1.3	2.7	50	1.6
1000	116	180	75	12	12.0	36.0	75	1.5	2.4	50	2.4
1200	116	230	80	8	9.6	28.8	80	1.5	2.1	50	3
1200	116	230	75	12	14.4	43.2	105	0.9	2.0	50	3
1250	116	230	75	12	15.0	45.0	80	1.5	2.1	50	3
1300	116	230	75	12	15.6	46.8	80	1.5	2.1	50	3
1400	136	180	70	7	9.8	29.4	85	1.3	2.1	50	3.7
1700	136	230	70	5	8.5	25.5	100	1.4	1.4	50	4.2
1900	136	230	75	5	9.5	28.5	100	1.2	1.7	50	4.2
2800	136	335	80	5	14.0	42.0	120	0.8	1.7	50	6.1
3060	136	345	80	5	15.3	45.9	120	0.9	1.5	50	6.2
3200	136	335	80	5	16.0	48.0	120	0.85	1.6	50	6.1

Amandla kagesi	1200V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo (Kg)
170	86	75	50	15	2.6	7.7	45	4.5	2.2	32	0.8
420	76	145	50	15	6.3	18.9	30	12	1.9	32	0.85
330	86	130	45	15	5.0	15.0	65	2.8	1.7	32	1.1
420	86	136	45	12	5.0	15.0	65	2	2.4	32	1.15
420	86	155	45	12	5.0	15.0	70	1.5	2.7	32	1.25
420	116	95	55	10	4.2	12.6	80	1.4	2.2	50	1.2
450	86	160	55	12	5.4	16.2	70	2.9	1.4	32	1.3
470	86	180	60	12	5.6	16.9	70	2.8	1.5	32	1.5
470	86	225	60	12	5.6	16.9	70	2.8	1.5	32	1.8
550	86	145	55	12	6.6	19.8	40	11	1.1	32	1,2
600	86	225	60	10	6.0	18.0	80	1.2	2.6	32	1.8
600	86	225	70	10	6.0	18.0	60	2.2	2.5	32	1.8
600	116	130	50	10	6.0	18.0	75	1.8	2.0	50	1.6
680	86	225	70	12	8.2	24.5	65	2.5	1.9	32	1.8
500	116	100	65	10	5.0	15.0	55	2.6	2.5	50	1.2
680	116	125	65	10	6.8	20.4	50	2.8	2.9	50	1.55
650	116	130	65	10	6.5	19.5	80	1.8	1.7	50	1.6
1000	116	180	70	7	7.0	21.0	75	1.3	2.7	50	2.4
1200	116	230	70	7	8.4	25.2	75	1.3	2.7	50	3
1250	116	230	70	7	8.8	26.3	75	1.2	3.0	50	3
1400	136	180	75	7	9.8	29.4	85	1.1	2.5	50	3.7
1700	136	230	80	5	8.5	25.5	85	1	2.8	50	4.2
850	136	125	70	8	6.8	20.4	75	1.6	2.2	50	1.9
950	136	125	60	8	7.6	22.8	80	1.1	2.8	50	2.4
1200	116	180	80	8	9.6	28.8	80	1	3.1	50	2.4
1200	116	180	60	5	6.0	18.0	100	0.8	2.5	50	2.4
1500	136	180	70	5	7.5	22.5	100	0.9	2.2	50	3.7
2700	136	335	80	5	13.5	40.5	110	0.85	1.9	50	6.1

Amandla kagesi	1300V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
230	86	125	50	15	5.7	17.1	35	5	3.3	32	1.1
210	86	130	50	15	3.2	9.5	70	2	2.0	32	1.1
330	86	180	60	15	5.0	14.9	65	3	1.6	32	1.5
470	86	230	65	12	5.6	16.9	65	3.2	1.5	32	1.8
410	116	130	65	12	4.9	14.8	80	1.8	1.7	50	1.6
650	116	180	65	10	6.5	19.5	85	2	1.4	50	2.4
880	116	230	80	10	8.8	26.4	85	2.2	1.3	50	3
900	136	180	70	7	6.3	18.9	100	1.6	1.3	50	3.7
1200	136	230	80	7	8.4	25.2	105	1.5	1.2	50	4.2

Amandla kagesi	1500V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
160	86	125	50	15	5.7	17.1	35	5	3.3	32	1.1
160	86	130	50	15	2.4	7.2	60	3.5	1.6	32	1.1
240	86	180	55	15	3.6	10.8	65	5	0.9	32	1.5
320	86	230	55	12	3.8	11.5	60	3.5	1.6	32	1.8
300	116	130	55	12	3.6	10.8	75	2	1.8	50	1.6
470	116	180	60	10	4.7	14.1	75	2.8	1.3	50	2.4
650	116	230	60	10	6.5	19.5	80	2.8	1.1	50	3
660	136	180	60	7	4.6	13.9	100	1.8	1.1	50	3.7
900	136	230	60	6	5.4	16.2	105	1.2	1.5	50	4.2
1000	136	260	70	5	5.0	15.0	120	0.9	1.5	50	4.7

Amandla kagesi	1800V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
130	86	125	55	15	5.7	17.1	35	5	3.3	32	1.1
120	86	130	55	15	1.8	5.4	60	2.5	2.2	32	1.1
180	86	180	60	15	2.7	8.1	65	2	2.4	32	1.5
260	86	230	60	12	3.1	9.4	60	3	1.9	32	1.8
230	116	130	60	12	2.8	8.3	80	2	1.6	50	1.6
360	116	180	65	10	3.6	10.8	80	3.2	1.0	50	2.4
500	116	230	70	10	5.0	15.0	75	3	1.2	50	3
510	136	180	70	7	3.6	10.7	100	2	1.0	50	3.7
680	136	230	70	7	4.8	14.3	95	2	1.1	50	4.2

Amandla kagesi	2000V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
100	86	125	55	15	1.5	4.5	35	3.8	4.3	32	1.1
90	86	130	55	15	1.4	4.1	65	2.5	1.9	32	1.1
150	86	180	60	15	2.3	6.8	60	3.5	1.6	32	1.5
200	86	230	60	12	2.4	7.2	65	2	2.4	32	1.8
180	116	130	65	10	1.8	5.4	75	2.5	1.4	50	1.6
280	116	180	70	10	2.8	8.4	70	2	2.0	50	2.4
380	116	230	80	10	3.8	11.4	80	2	1.6	50	3
400	136	180	60	7	2.8	8.4	100	1.6	1.3	50	3.7
550	136	230	70	7	3.9	11.6	100	1.5	1.3	50	4.2
850	136	335	80	5	4.3	12.8	120	1.1	1.3	50	6.1

Amandla kagesi	2800V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
160	116	180	70	30	4.8	14.4	75	2.2	1.6	50	2.4
210	116	230	75	25	5.3	15.8	70	2.8	1.5	50	3
225	136	180	75	20	4.5	13.5	85	2	1.4	50	3.7
300	136	230	80	15	4.5	13.5	80	2.5	1.3	50	4.2

Amandla kagesi	4000V.DC
Cn(uF)	φD	H	I-ESL(nH)	dv/dt(V/μS)	I-Ip(KA)	Is(KA)	I-Irms(A)50℃	I-ESR (mΩ) @1KHz	I-Rth(K/W)	P(mm)	isisindo
70	116	180	70	50	3.5	10.5	70	3.5	1.2	50	2.4
95	116	230	75	40	3.8	11.4	70	3.6	1.1	50	3
100	136	180	75	35	3.5	10.5	85	3	0.9	50	3.7
135	136	230	80	30	4.1	12.2	80	3.5	0.9	50	4.2

I-CRE Polypropyleneamandla ifilimu capacitorama-s asetshenziswa kaningi ezinhlelweni zamandla kagesi aphezulu ngenxa yamandla awo aphezulu e-dielectric, isisindo sevolumu ephansi, kanye ne-dielectric constant ephansi kakhulu (tanδ).Ama-capacitor e-CRE nawo abhekana nokulahlekelwa okuphansi futhi, kuye ngezidingo zohlelo lokusebenza.Izixazululo ze-CRE ezithile ze-capacitor zithandwa kakhulu kumakhasimende emhlabeni wonke.

I-CRE ineqembu le-RD elivuthiwe kakhulu ukuletha isisombululo sekhwalithi ephezulu yama-capacitor amandla wesistimu yokuguqula amandla.Ngokuvamile silandela inkambiso yokugxila kumakhasimende, imininingwane egxile ku-Factory Cheap China power electronic Film Capacitor, Sithemba ngobuqotho ukunquma ukusebenzelana okwanelisayo nawe endaweni yesikhathi eside.Sizokwazisa ngenqubekelaphambili yethu futhi uhlale ulindele ukwakha ubudlelwano obuzinzile bamabhizinisi amancane kanye nawe.

I-Factory China PP film capacitor, Ngaphezu kweminyaka engama-26, Izinkampani ezichwepheshile ezivela emhlabeni wonke zisithatha njengabalingani bazo besikhathi eside futhi abazinzile.Besilokhu sigcina ubudlelwano bebhizinisi obuqinile nabathengisi bezitolo abangaphezu kuka-200 eJapan, Korea, USA, UK, Germany, Canada, France, Italian, Poland, South Africa, Ghana, Nigeria njll.

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