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Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitors - CRE

Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitor - Isithombe Esifakiwe se-CRE
  • Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitors - CRE
  • Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitors - CRE
  • Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitors - CRE

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ividiyo Ehlobene

Impendulo (2)

Ukuze sibe yisiteji sokufeza amaphupho abasebenzi bethu!Ukwakha iqembu elijabule, elibumbene futhi elichwepheshile!Ukuze sifinyelele inzuzo efanayo yamakhasimende ethu, abahlinzeki, umphakathi kanye nathi ngokwethuI-Pv Inverter Capacitor , Ama-Capacitor Amandla Okupholisa , I-Industrial Capacitors Iyathengiswa, Siyakwamukela ngemfudumalo ukubambisana nokuthuthukisa nathi!sizoqhubeka nokuhlinzeka ngomkhiqizo noma isevisi ngezinga eliphezulu nezinga lokuncintisana.
Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitor - Imininingwane ye-CRE:

Idatha yobuchwepheshe

Ibanga lokushisa elisebenzayo Ukushisa okuphezulu.Izinga lokushisa elisebenzayo.,Phezulu,ubukhulu: + 85℃Izinga lokushisa eliphezulu: +85℃Izinga lokushisa eliphansi lesigaba: -40℃
ububanzi be-capacitance 0.1μF～5.6μF
I-voltage elinganiselwe

630V.DC～2000V.DC
I-Cap.tol

±5%(J) ;±10%(K)
Melana ne-voltage

1.5Un DC/10S
Isici sokulahla

tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz
Ukumelana ne-insulation

C≤0.33μF RS≥15000 MΩ (ku-20℃ 100V.DC 60S)

C＞0.33μF RS*C≥5000S (ku-20℃ 100V.DC 60S)
Melana nesimangalo samanje
Iminyaka yokuphila

100000h(Un; Θhotspot≤85°C)
Izinga lesithenjwa

I-IEC 61071;IEC 61881;GB/T17702

Isicelo

1. I-IGBT Snubber.

2. Isetshenziswa kakhulu ezintweni zikagesi zamandla lapho i-voltage ephezulu, isiqongo sokuvikela ukumuncwa kwamanje.

Umdwebo wohlaka

 

1

 

 

 

 

I-SMJ-TE Axial Capacitor
Amandla kagesi Un630V.DC;Urms400Vac;Us 945V
Amandla (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.22 32 9.5 17.5 0.8 16 23 300 66 5.3
0.33 32 12 20 1 13 22 200 66 6.5
0.47 32 14.5 22.5 1 11 21 220 103.4 8.3
0.68 32 18 26 1 10 20 180 122.4 9.5
1 37 11 19 1 8 28 150 150 7.6
1.5 37 13.5 21.5 1 7 27 150 225 9.5
2 37 16 24 1.2 6 24 130 260 10.2
2.5 37 18 26 1.2 5.5 25 120 300 10.5
3 37 20 28 1.2 5 30 110 330 10.8
3.3 37 21 29 1.2 4.5 30 110 363 11.2
4 57 27 36.5 1.2 4.2 32 220 880 12.8
4.7 57 28 40.5 1.2 3.8 32 200 940 13.8
5.6 57 31 33.5 1.2 3.5 32 185 1036 13.5
6.8 37 29 41.5 1.2 2.5 28 100 680 13.8
6.8 57 34 46.5 1.2 2.8 30 180 1224 14.2

 

Amandla kagesi Un 1000V.DC;Urms 500Vac;Us 1500V
Amandla (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.15 32 10 17.5 0.8 20 20 1100 165 5.5
0.22 32 12 20 1 15 21 1000 220 7.3
0.33 32 15.5 23 1 13 21 1000 330 8.7
0.47 32 18.5 26 1.2 10 23 1000 470 10.5
0.47 44 14 22 1.2 9 24 900 423 9.5
0.68 32 20 32.5 1.2 7 25 900 612 10.8
0.68 44 17 25 1.2 6 26 800 544 10.2
1 44 21.5 29.5 1.2 5.6 27 900 900 11
1.5 44 26 35.5 1.2 5 29 900 1350 12
1.5 57 21 29 1.2 5 30 700 1050 12.2
2 44 28 40.5 1.2 4.8 30 800 1600 13.2
2 57 24 33.5 1.2 4.8 32 600 1200 12.8
2.2 44 30 42.5 1.2 4.2 32 600 1320 13.8
2.2 57 25 34.5 1.2 4.2 32 500 1100 13.5
2.5 57 25 38 1.2 4 33 500 1250 14.2
3 57 28 40.5 1.2 3.5 34 480 1440 15.6
3.3 57 29.5 42 1.2 3.2 35 450 1485 16.5
3.5 57 30.5 43 1.2 3.2 35 450 1575 17.2
4.7 57 35 50.5 1.2 3 36 420 1974 17.8
5.6 57 38.5 65 1.2 2.8 38 400 2240 18.2

 

Amandla kagesi Un 1200V.DC;Urms 550Vac;Us 1800V
Amandla (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.1 32 8.5 16 0.8 20 20 1300 130 6
0.15 32 10 17.5 1 18 20 1200 180 7.5
0.22 32 13 21 1 15 22 1200 264 8.3
0.33 32 16 24 1 12 23 1200 396 9
0.47 32 17.5 30 1.2 10 23 1200 564 9.5
0.47 44 15 23 1.2 9 26 1100 517 9.8
0.68 32 21.5 34 1.2 8 25 1100 517 10
0.68 44 18.5 26.5 1.2 6 27 1000 680 11.7
1 44 23 31 1.2 5 28 1000 1000 12.4
1.5 44 26.5 39 1.2 5 30 950 1425 13.5
1.5 57 22.5 30.5 1.2 5 29 900 1350 12.6
2 44 29 45 1.2 5 30 800 1600 14.2
2 57 26.5 34.5 1.2 4.8 30 750 1500 13.8
2.2 44 31 47 1.2 4.2 32 800 1760 14.5
2.2 57 27.5 35.5 1.2 4.2 35 700 1540 14.5
3 57 29 44.5 1.2 3.2 37 500 1500 17.2
3.3 57 30.5 46 1.2 3.2 38 450 1485 17.8
4.7 57 38 53.5 1.2 3 38 420 1974 18.2

 

Amandla kagesi Un 1700V.DC;Urms 600Vac;Us 2550V
Amandla (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.1 32 9.5 17.5 0.8 18 25 1300 130 7.5
0.15 32 12 20 1 16 24 1200 180 8.5
0.22 32 15 23 1 15 24 1200 264 9.3
0.33 32 18.5 26.5 1 12 22 1200 396 9.9
0.33 44 13.5 21.5 1.2 12 29 1100 363 10.2
0.47 44 16 24 1.2 9 28 1000 470 11.2
0.68 44 20 28 1.2 8 27 1000 680 11.7
1 44 24 33.5 1.2 5.6 26 900 900 12.4
1 57 19.5 27.5 1.2 6 33 850 850 10.8
1.5 44 28 40.5 1.2 4.8 25 800 1200 13.5
1.5 57 24 32 1.2 5 33 750 1125 13.5
2 44 31.5 47 1.2 4.5 24 750 1500 14.2
2 57 27.5 37 1.2 4.8 32 650 1300 12.8
2.2 44 33.5 49 1.2 4.5 34 700 1540 15.6
2.2 57 29 40 1.2 4.2 32 600 1320 14.5
3 57 31 46.5 1.2 4 30 560 1680 17.2
3.3 57 33 48.5 1.2 3.2 29 500 1650 17.6
4 57 37 52.5 1.2 3 28 450 1800 18.2

 

Amandla kagesi Un 2000V.DC;Urms 700Vac;Us 3000V
Amandla (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.068 32 9 17 0.8 25 23 1500 102 6.9
0.1 32 11.5 19.5 1 18 22 1500 150 8.2
0.1 37 10.5 18.5 1 18 26 1450 145 8
0.22 32 17.5 25.5 1.2 15 21 1400 308 9.1
0.22 37 16 24 1.2 15 25 1300 286 9
0.33 37 20 28 1.2 12 24 1250 412.5 9.5
0.33 44 18 26 1.2 12 30 1200 396 10.2
0.47 44 19.5 32 1.2 10 29 1100 517 12.4
0.68 44 24 36.5 1.2 8 28 1000 680 14.2
0.68 57 18.5 31 1.2 8 27 900 612 14.2
1 57 23.5 36 1.2 6 31 950 950 14.5
1.5 57 29.5 42 1.2 5 31 850 1275 14.5
2 57 33 48.5 1.2 4.2 31 750 1500 16.5
2.2 57 35 50.5 1.2 4 30 700 1540 17.8

 

Amandla kagesi Un 3000V.DC;Urms 750Vac;Us 4500V
Amandla (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.047 44 13.5 21.5 1 22 20 2000 94 8.5
0.068 44 17 25 1 20 20 1800 122.4 10.5
0.1 44 20.5 28.5 1.2 18 20 1500 150 12.4
0.15 44 26 34 1.2 16 22 1350 202.5 13.8
0.22 44 29 41.5 1.2 14.5 22 1200 264 14.5
Izithombe zemininingwane yomkhiqizo:

Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitors - izithombe zemininingwane ye-CRE

Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitors - izithombe zemininingwane ye-CRE

Idizayini Evuselelekayo Ye-Pcb Capacitor - I-Axial GTO snubber capacitors - izithombe zemininingwane ye-CRE

Umhlahlandlela Womkhiqizo Ohlobene:
Okuhlangenwe nakho okucebile kakhulu kokuphathwa kwamaphrojekthi kanye nemodeli yesevisi eyodwa kuya kweyodwa kwenza ukubaluleka okuphezulu kokuxhumana kwebhizinisi kanye nokuqonda kwethu kalula lokho okulindele ku-Renewable Design ye-Pcb Capacitor - Axial GTO snubber capacitors - CRE , Umkhiqizo uzohlinzeka kuwo wonke umhlaba, njenge: Albania, Armenia, Cape Town, Izixazululo zethu zibonwa kabanzi futhi zithenjwa ngabasebenzisi futhi zingahlangabezana nokushintsha ngokuqhubekayo kwezidingo zomnotho nezenhlalo.Samukela amakhasimende amasha namadala avela kuyo yonke imikhakha yempilo ukuthi asithinte ukuze uthole ubudlelwano bebhizinisi besikhathi esizayo kanye nempumelelo efanayo!
    • Intengo enengqondo, isimo sengqondo esihle sokubonisana, ekugcineni sifinyelela isimo sokuwina, ukubambisana okujabulisayo! 5 Izinkanyezi Ngu-Heather wase-Oman - 2017.08.18 18:38
    Umphathi wama-akhawunti wenze isingeniso esinemininingwane mayelana nomkhiqizo, ukuze sibe nokuqonda okuphelele komkhiqizo, futhi ekugcineni sanquma ukubambisana. 5 Izinkanyezi Ngu-Polly wase-Algeria - 2017.12.09 14:01

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