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I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – CRE

I-18 Years Factory Dc Power Capacitor - Ama-capacitor e-Axial GTO angenasici – Isithombe Esifakiwe se-CRE
  • I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – CRE
  • I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – CRE
  • I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – CRE

Incazelo emfushane:


Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Ividiyo Ehlobene

Impendulo (2)

Izakhiwo zethu ezihlonyiswe kahle kanye nokuphathwa kwekhwalithi enhle kakhulu kuzo zonke izigaba zokukhiqiza kusenza sikwazi ukuqinisekisa ukwaneliseka okuphelele kwabathengiIsixazululo se-Power Electronic Capacitor , I-Ev Capacitor , Ama-Capacitors Ezicelweni Zezimoto, Silangazelela ukuthola imibuzo yakho maduze futhi sithemba ukuthi sizothola ithuba lokusebenza nawe esikhathini esizayo. Siyakwamukela ukuzobona inhlangano yethu.
I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – Imininingwane ye-CRE:

Idatha yobuchwepheshe

Ibanga lokushisa lokusebenza Ukushisa okuphezulu. Okuphezulu, okuphezulu: + 85℃ Ukushisa okuphezulu kwesigaba: +85℃ Ukushisa okuphansi kwesigaba: -40℃
ububanzi bomthamo 0.1μF～5.6μF
I-voltage elinganisiwe

630V.DC～2000V.DC
I-Cap.tol

±5%(J) ;±10%(K)
Melana ne-voltage

1.5Un DC/10S
Isici sokushabalalisa

tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz
Ukumelana nokushisa

C≤0.33μF RS≥15000 MΩ (ku-20℃ 100V.DC 60S)

C＞0.33μF RS*C≥5000S (ku-20℃ 100V.DC 60S)
Melana nomugqa wamanje wokushaya
Isikhathi sokuphila

100000h(Un; Θhotspot≤85°C)
Izinga elijwayelekile lokubhekisela

I-IEC 61071; IEC 61881; GB/T17702

Isicelo

1. I-IGBT Snubber.

2. Isetshenziswa kabanzi kumishini kagesi yamandla lapho i-voltage ephezulu ifinyelela phezulu, ukuvikelwa kokumuncwa kwamanje okuphezulu.

Umdwebo wohlaka

 

1

 

 

 

 

I-SMJ-TE Axial Capacitor
I-voltage Un630V.DC;Urms400Vac;Us 945V
Umthamo (uF) L (mm±1) I-T (mm±1) Ububanzi (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) i-dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.22 32 9.5 17.5 0.8 16 23 300 66 5.3
0.33 32 12 20 1 13 22 200 66 6.5
0.47 32 14.5 22.5 1 11 21 220 103.4 8.3
0.68 32 18 26 1 10 20 180 122.4 9.5
1 37 11 19 1 8 28 150 150 7.6
1.5 37 13.5 21.5 1 7 27 150 225 9.5
2 37 16 24 1.2 6 24 130 260 10.2
2.5 37 18 26 1.2 5.5 25 120 300 10.5
3 37 20 28 1.2 5 30 110 330 10.8
3.3 37 21 29 1.2 4.5 30 110 363 11.2
4 57 27 36.5 1.2 4.2 32 220 880 12.8
4.7 57 28 40.5 1.2 3.8 32 200 940 13.8
5.6 57 31 33.5 1.2 3.5 32 185 1036 13.5
6.8 37 29 41.5 1.2 2.5 28 100 680 13.8
6.8 57 34 46.5 1.2 2.8 30 180 1224 14.2

 

I-voltage Un 1000V.DC;Urms 500Vac;Us 1500V
Umthamo (uF) L (mm±1) I-T (mm±1) Ububanzi (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) i-dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.15 32 10 17.5 0.8 20 20 1100 165 5.5
0.22 32 12 20 1 15 21 1000 220 7.3
0.33 32 15.5 23 1 13 21 1000 330 8.7
0.47 32 18.5 26 1.2 10 23 1000 470 10.5
0.47 44 14 22 1.2 9 24 900 423 9.5
0.68 32 20 32.5 1.2 7 25 900 612 10.8
0.68 44 17 25 1.2 6 26 800 544 10.2
1 44 21.5 29.5 1.2 5.6 27 900 900 11
1.5 44 26 35.5 1.2 5 29 900 1350 12
1.5 57 21 29 1.2 5 30 700 1050 12.2
2 44 28 40.5 1.2 4.8 30 800 1600 13.2
2 57 24 33.5 1.2 4.8 32 600 1200 12.8
2.2 44 30 42.5 1.2 4.2 32 600 1320 13.8
2.2 57 25 34.5 1.2 4.2 32 500 1100 13.5
2.5 57 25 38 1.2 4 33 500 1250 14.2
3 57 28 40.5 1.2 3.5 34 480 1440 15.6
3.3 57 29.5 42 1.2 3.2 35 450 1485 16.5
3.5 57 30.5 43 1.2 3.2 35 450 1575 17.2
4.7 57 35 50.5 1.2 3 36 420 1974 17.8
5.6 57 38.5 65 1.2 2.8 38 400 2240 18.2

 

I-voltage Un 1200V.DC;Urms 550Vac;Us 1800V
Umthamo (uF) L (mm±1) I-T (mm±1) Ububanzi (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) i-dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.1 32 8.5 16 0.8 20 20 1300 130 6
0.15 32 10 17.5 1 18 20 1200 180 7.5
0.22 32 13 21 1 15 22 1200 264 8.3
0.33 32 16 24 1 12 23 1200 396 9
0.47 32 17.5 30 1.2 10 23 1200 564 9.5
0.47 44 15 23 1.2 9 26 1100 517 9.8
0.68 32 21.5 34 1.2 8 25 1100 517 10
0.68 44 18.5 26.5 1.2 6 27 1000 680 11.7
1 44 23 31 1.2 5 28 1000 1000 12.4
1.5 44 26.5 39 1.2 5 30 950 1425 13.5
1.5 57 22.5 30.5 1.2 5 29 900 1350 12.6
2 44 29 45 1.2 5 30 800 1600 14.2
2 57 26.5 34.5 1.2 4.8 30 750 1500 13.8
2.2 44 31 47 1.2 4.2 32 800 1760 14.5
2.2 57 27.5 35.5 1.2 4.2 35 700 1540 14.5
3 57 29 44.5 1.2 3.2 37 500 1500 17.2
3.3 57 30.5 46 1.2 3.2 38 450 1485 17.8
4.7 57 38 53.5 1.2 3 38 420 1974 18.2

 

I-voltage Un 1700V.DC;Urms 600Vac;Us 2550V
Umthamo (uF) L (mm±1) I-T (mm±1) Ububanzi (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) i-dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.1 32 9.5 17.5 0.8 18 25 1300 130 7.5
0.15 32 12 20 1 16 24 1200 180 8.5
0.22 32 15 23 1 15 24 1200 264 9.3
0.33 32 18.5 26.5 1 12 22 1200 396 9.9
0.33 44 13.5 21.5 1.2 12 29 1100 363 10.2
0.47 44 16 24 1.2 9 28 1000 470 11.2
0.68 44 20 28 1.2 8 27 1000 680 11.7
1 44 24 33.5 1.2 5.6 26 900 900 12.4
1 57 19.5 27.5 1.2 6 33 850 850 10.8
1.5 44 28 40.5 1.2 4.8 25 800 1200 13.5
1.5 57 24 32 1.2 5 33 750 1125 13.5
2 44 31.5 47 1.2 4.5 24 750 1500 14.2
2 57 27.5 37 1.2 4.8 32 650 1300 12.8
2.2 44 33.5 49 1.2 4.5 34 700 1540 15.6
2.2 57 29 40 1.2 4.2 32 600 1320 14.5
3 57 31 46.5 1.2 4 30 560 1680 17.2
3.3 57 33 48.5 1.2 3.2 29 500 1650 17.6
4 57 37 52.5 1.2 3 28 450 1800 18.2

 

I-voltage Un 2000V.DC;Urms 700Vac;Us 3000V
Umthamo (uF) L (mm±1) I-T (mm±1) Ububanzi (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) i-dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.068 32 9 17 0.8 25 23 1500 102 6.9
0.1 32 11.5 19.5 1 18 22 1500 150 8.2
0.1 37 10.5 18.5 1 18 26 1450 145 8
0.22 32 17.5 25.5 1.2 15 21 1400 308 9.1
0.22 37 16 24 1.2 15 25 1300 286 9
0.33 37 20 28 1.2 12 24 1250 412.5 9.5
0.33 44 18 26 1.2 12 30 1200 396 10.2
0.47 44 19.5 32 1.2 10 29 1100 517 12.4
0.68 44 24 36.5 1.2 8 28 1000 680 14.2
0.68 57 18.5 31 1.2 8 27 900 612 14.2
1 57 23.5 36 1.2 6 31 950 950 14.5
1.5 57 29.5 42 1.2 5 31 850 1275 14.5
2 57 33 48.5 1.2 4.2 31 750 1500 16.5
2.2 57 35 50.5 1.2 4 30 700 1540 17.8

 

I-voltage Un 3000V.DC;Urms 750Vac;Us 4500V
Umthamo (uF) L (mm±1) I-T (mm±1) Ububanzi (mm±1) φd (mm) I-ESR @100KHz (mΩ) I-ESL(nH) i-dv/dt(V/μS) I-Ipk(A) I-Irms @25℃ @100KHz (A)
0.047 44 13.5 21.5 1 22 20 2000 94 8.5
0.068 44 17 25 1 20 20 1800 122.4 10.5
0.1 44 20.5 28.5 1.2 18 20 1500 150 12.4
0.15 44 26 34 1.2 16 22 1350 202.5 13.8
0.22 44 29 41.5 1.2 14.5 22 1200 264 14.5
Izithombe zemininingwane yomkhiqizo:

I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – izithombe zemininingwane ye-CRE

I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – izithombe zemininingwane ye-CRE

I-18 Years Factory Dc Power Capacitor - Ama-Axial GTO snubber capacitors – izithombe zemininingwane ye-CRE

Umhlahlandlela Womkhiqizo Ohlobene:
Ukudala inani elengeziwe kumakhasimende yifilosofi yethu yebhizinisi; ukukhula kwabathengi kuyindlela yethu yokusebenza ye-18 Years Factory Dc Power Capacitor - Axial GTO snubber capacitors - CRE, Umkhiqizo uzonikezwa kuwo wonke umhlaba, njenge: Washington, Panama, New York, Imikhiqizo yethu ithole idumela elihle kuwo wonke amazwe ahlobene. Kusukela ekusungulweni kwenkampani yethu, sigcizelele ekwakhiweni kwemikhiqizo yethu kanye nendlela entsha yokuphatha yanamuhla, okuheha inani elikhulu lamakhono kulo mkhakha. Sibheka ikhwalithi yesisombululo njengesici sethu esibaluleke kakhulu.
    • Izimpahla esizitholile kanye nesampula yabasebenzi bokuthengisa esibabonisayo zisezingeni elifanayo, empeleni zingumkhiqizi ofanele ukubolekwa. Izinkanyezi ezi-5 NguMeroy waseLahore - 2017.04.08 14:55
    Izimpahla ziphelele kakhulu futhi umphathi wezokuthengisa wenkampani ufudumele, sizofika kule nkampani ukuzothenga ngesikhathi esizayo. Izinkanyezi ezi-5 NguCarol waseCyprus - 2017.08.18 11:04

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