I-DC LINK capacitor DKMJ-S

Incazelo emfushane:

High power capacitor DKMJ-S series

1. Ibanga lokushisa elisebenzayo: +70 kuya ku-45℃

2. Ibanga lamandla: 100uf - 20000uf

3. I-voltage elinganiselwe: 600VDC-4000VDC

4. Ubukhulu be-altitute: 2000m

5. Isikhathi sokuphila: amahora angu-100000

6. Inkomba: okujwayelekile: IEC61071,IEC61881,ISO9001

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Uchungechunge lwe-DKMJ-S

I-CRE ibe ngumholi womhlaba ekwakhiweni kobuchwepheshe befilimu ye-capacitor esebenza kahle iminyaka eyi-10.Sikhiqiza ama-capacitor anenxeba elomile, ukusuka ku-100VDC ukuya ku-4kVDC.Isici esibalulekile se-CRE High Power ubuchwepheshe bokuziphilisa obulawulwayo.Lokhu kuvumela ama-capacitor ukuthi aqhubeke nokusebenza ngaphandle kokwehluleka kwenhlekelele ngokuvala ngempumelelo noma yiziphi izingosi ze-microscopic conduction ngaphakathi kwe-dielectric.

Nakuba ama-capacitor efilimu yamandla ehlala esebenza kuyo yonke impilo yawo yokusebenza, inani lamandla lasekuqaleni lizokwehla ngenani elincike ku-voltage esetshenzisiwe kanye nezinga lokushisa lendawo eshisayo.Amadizayini ethu ajwayelekile ahlinzeka ngokulahleka kwe-< (2-5)% kwamandla ngaphezu kwamahora angu-100,000 ukuphila konke ku-voltage yegama kanye nezinga lokushisa elingu-70ºC, kuyilapho amadizayini athile ohlelo lokusebenza anganikezwa uma ecelwa.Uchungechunge oluhlukahlukene lwe-CRE High Power Capacitors luyatholakala ekuhlungeni kwe-DC, Ukuvikela, Ukukhipha I-Pulse Discharge, Tuning, ukuhlunga kwe-AC kanye nezinhlelo zokusebenza zeSitoreji.

Ukucaciswa

Amandla kagesi	I-Un 800V.DC Us 1200V Ur 200V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms(A)50℃@10KHz	I-ESR (mΩ) @1KHz	I-Rth (K/W)	Isisindo (Kg)
4000	340	125	190	5	20.0	120	1.1	0.9	17.6
8000	340	125	350	4	32.0	180	0.72	0.6	31.2
6000	420	125	245	5	30.0	150	0.95	0.7	26.4
10000	420	125	360	4	40.0	200	0.72	0.5	39.2
12000	420	235	245	4	48.0	250	0.9	0.3	49.6
20000	420	235	360	3	60.0	300	0.6	0.3	73.6
Amandla kagesi	Un 1200V.DC Us 1800V Ur 300V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms(A)50℃@10KHz	I-ESR (mΩ) @1KHz	I-Rth (K/W)	Isisindo (Kg)
2500	340	125	190	8	20.0	120	1.1	0.9	17.6
3300	340	125	245	8	26.4	150	0.95	0.7	22.4
5000	420	125	300	7	35.0	180	0.8	0.6	32.8
7500	420	125	430	5.5	41.3	200	0.66	0.6	44.8
5000	340	235	190	8	40.0	200	1.1	0.3	32.8
10000	340	235	350	6	60.0	250	0.8	0.3	58.4
5000	420	235	175	8	40.0	200	1	0.4	36
7500	420	235	245	7	52.5	250	0.9	0.3	49.6
10000	420	235	300	7	70.0	250	0.8	0.3	61.6
15000	420	235	430	5	75.0	300	0.6	0.3	84
Amandla kagesi	Un 1500V.DC Us 2250V Ur 450V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms(A)50℃@10KHz	I-ESR (mΩ) @1KHz	I-Rth (K/W)	Isisindo (Kg)
1200	340	125	190	10	12.0	120	1.1	0.9	17.6
3000	340	125	420	8	24.0	180	0.66	0.7	37.6
2000	420	125	245	10	20.0	150	0.95	0.7	26.4
4000	420	125	430	8	32.0	200	0.66	0.6	44.8
5000	340	235	350	8	40.0	250	0.8	0.3	58.4
4000	420	235	245	10	40.0	250	0.9	0.3	49.6
8000	420	235	430	8	64.0	300	0.6	0.3	84
Amandla kagesi	Un 2000V.DC Us 3000V Ur 600V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms(A)50℃@10KHz	I-ESR (mΩ) @1KHz	I-Rth (K/W)	Isisindo (Kg)
1000	340	125	245	12	12.0	150	0.95	0.7	22.4
1500	340	125	350	10	15.0	180	0.72	0.6	31.2
2000	420	125	360	10	20.0	200	0.72	0.5	39.2
2400	420	125	430	9	21.6	200	0.66	0.6	44.8
3200	340	235	350	10	32.0	250	0.8	0.3	46.4
4000	420	235	360	10	40.0	280	0.7	0.3	58.4
4800	420	235	430	9	43.2	300	0.6	0.3	67.2
Amandla kagesi	Un 2200V.DC Us 3300V Ur 600V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms (A) ubuningi	I-ESR (mΩ)	I-Rth (K/W)	Isisindo (Kg)
2000	420	235	245	12	24	150	0.9	0.740740741	40
2750	420	235	300	10	27.5	200	0.8	0.46875	49.6
3500	420	235	360	10	35	200	0.7	0.535714286	58.4
Amandla kagesi	Un 3000V.DC Us 4500V Ur 800V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms (A) ubuningi	I-ESR (mΩ)	I-Rth (K/W)	Isisindo (Kg)
1050	420	235	245	20	21	150	0.9	0.740740741	40
1400	420	235	300	15	21	200	0.8	0.46875	49.6
1800	420	235	360	15	27	200	0.7	0.535714286	58.4
Amandla kagesi	Un 4000V.DC Us 6000V Ur 1000V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms (A) ubuningi	I-ESR (mΩ)	I-Rth (K/W)	Isisindo (Kg)
600	420	235	245	20	12	150	0.9	0.740740741	40
800	420	235	300	20	16	200	0.8	0.46875	49.6
1000	420	235	360	20	20	200	0.7	0.535714286	58.4
Amandla kagesi	Un 2800V.DC Us 4200V Ur 800V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms(A)50℃@10KHz	I-ESR (mΩ) @1KHz	I-Rth (K/W)	Isisindo (Kg)
2×1000	560	190	310	20	2×20	2×350	1	0.2	60
Amandla kagesi	I-Un 3200V.DC Us 4800V Ur 900V
I-Cn (μF)	W (mm)	T (mm)	H (mm)	dv/dt (V/μS)	I-Ip (KA)	I-Irms(A)50℃@10KHz	I-ESR (mΩ) @1KHz	I-Rth (K/W)	Isisindo (Kg)
2×1200	340	175	950	15	2×18	2×200	1.0	0.5	95