I-Factory made hot-sale Snubber For High Powered Thyristor - I-high-class IGBT Snubber capacitor design yezicelo zamandla aphezulu - CRE

I-Factory made hot Snubber For High Powered Thyristor - Idizayini ephezulu ye-IGBT Snubber capacitor yezicelo zamandla aphezulu - Isithombe Esifakiwe se-CRE

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Imininingwane Yomkhiqizo

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Ngokuzinikezela ekuphathweni kwekhwalithi eqinile kanye nezinsizakalo zamakhasimende ezicabangelayo, amakhasimende ethu abasebenzi abanolwazi ngokuvamile ayatholakala ukuze axoxe ngezidingo zakho futhi aqinisekise ubumnandi obugcwele bamakhasimendeI-Ac Capacitor Yezisetshenziswa Zokushisela , I-Electronic Film Capacitor , I-Cylindrical Aluminium Case Film Capacitor, Samukela ngobuqotho abangani abavela kuwo wonke umhlaba ukuze basebenzisane nathi ngaphakathi kwesisekelo sezinzuzo ezifanayo zesikhathi eside.

I-Factory made hot-sale Snubber For High Powered Thyristor - I-high-class IGBT Snubber capacitor design yezicelo zamandla aphezulu - Imininingwane ye-CRE:

Idatha yobuchwepheshe

Ibanga lokushisa elisebenzayo	Izinga lokushisa eliphezulu.,Phezulu,ubukhulu: +105℃ Izinga lokushisa lesigaba esiphezulu: +85℃ Izinga lokushisa eliphansi lesigaba: -40 ℃
ububanzi be-capacitance	0.1μF～5.6μF
I-voltage elinganiselwe	700V.DC～3000V.DC
I-Cap.tol	±5%(J);±10%(K)
Melana ne-voltage	1.5Un DC/10S
Isici sokulahla	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Ukumelana ne-insulation	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)
Melana nesimangalo samanje	bheka i-database
Ukuvinjelwa komlilo	I-UL94V-0
Iminyaka yokuphila	100000h(Un; Θhotspot≤85°C)
Izinga lesithenjwa	I-IEC61071;GB/T17702;

Ithebula lemininingwane

Amandla kagesi	Un 700V.DC,Urms400Vac;Us1050V
	Ubukhulu (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	I-ESR @100KHz (mΩ)	I-ESL(nH)	dv/dt (V/μS)	I-Ipk(A)	I-Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Amandla kagesi	Un 1000V.DC,Urms500Vac;Us1500V
	Ubukhulu (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	I-ESR(mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Amandla kagesi	I-Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	I-ESR(mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Amandla kagesi	I-Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	I-ESR(mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Amandla kagesi	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	I-ESR(mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Amandla kagesi	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	I-ESR(mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Izithombe zemininingwane yomkhiqizo:

Umhlahlandlela Womkhiqizo Ohlobene:

Sijabulela isimo esihle ngokwedlulele phakathi kwamathemba ethu ekhwalithi ephezulu edayiswayo, intengo yokuncintisana kanye nenkonzo ekahle yeFactory made hot Snubber For High Powered Thyristor - Idizayini yezinga eliphezulu ye-IGBT Snubber capacitor yezicelo zamandla aphezulu - CRE , Umkhiqizo izohlinzeka emhlabeni wonke, njengokuthi: Seychelles, Manchester, Brasilia, Iqembu lethu lobunjiniyela elichwepheshile lizohlala likulungele ukukusiza ngokubonisana kanye nempendulo.Siyakwazi futhi ukukunikeza amasampula amahhala ukuze uhlangabezane nezidingo zakho.Imizamo emihle kakhulu izokhiqizwa ukukunikeza isevisi nezimpahla ezifanele.Kunoma ubani ocabanga ngenkampani yethu nokuthengiswayo, qiniseka ukuthi uyasithinta ngokusithumelela ama-imeyili noma usithinte ngokushesha.Njengendlela yokwazi okuthengiswayo kwethu nokuqinile.okuningi, ungeza efekthri yethu ukuze ukuthole.Sizohlala njalo samukela izivakashi ezivela emhlabeni wonke ezebhizinisi lethu ukuze sakhe ubudlelwano benkampani nathi.Qiniseka ukuthi uzizwa ukhululekile ukuxhumana nathi ngebhizinisi futhi sikholelwa ukuthi besihlose ukwabelana ngomuzwa osebenzayo wokuhweba nabo bonke abathengisi bethu.

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