I-GTO snubber capacitor kumishini kagesi kagesi

I-GTO snubber capacitor in power electronic equipment Isithombe esifakiwe

Incazelo emfushane:

Amasekhethi e-snubber abalulekile kuma-diode asetshenziswa ekushintsheni amasekhethi.Ingasindisa i-diode kusuka ku-overvoltage spikes, engase ivele ngesikhathi senqubo yokuhlehla yokutakula.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Idatha yobuchwepheshe

Ibanga lokushisa elisebenzayo	Ukushisa okuphezulu.Izinga lokushisa elisebenzayo.,Phezulu,ubukhulu: + 85℃Izinga lokushisa eliphezulu: +85℃Izinga lokushisa eliphansi lesigaba: -40℃
ububanzi be-capacitance	0.22⽞3μF
I-voltage elinganiselwe	3000V.DC～10000V.DC
I-Cap.tol	±5%(J) ;±10%(K)
Melana ne-voltage	1.35Un DC/10S
Isici sokulahla	tgδ≤0.001 f=1KHz
Ukumelana ne-insulation	C≤0.33μF RS≥15000 MΩ (ku-20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (ku-20℃ 100V.DC 60S)
Melana nesimangalo samanje	bheka i-database
Iminyaka yokuphila	100000h(Un; Θhotspot≤70°C)
Izinga lesithenjwa	I-IEC 61071 ;

Isici

1. I-Mylar tape, Yavalwa ngenhlaka;

2. Imikhondo yamantongomane ethusi;

3. Ukumelana ne-voltage ephezulu, i-tgδ ephansi, ukukhuphuka kwezinga lokushisa eliphansi;

4. i-ESL ephansi ne-ESR;

5. I-pulse ephezulu yamanje.

Isicelo

1. I-GTO Snubber.

2. Isetshenziswa kakhulu ezintweni zikagesi zamandla lapho i-voltage ephezulu, isiqongo sokuvikela ukumuncwa kwamanje.

Isifunda esijwayelekile

Umdwebo wohlaka

Ukucaciswa

Un=3000V.DC
Amandla (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Amandla (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un=7000V.DC
Amandla (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un=8000V.DC
Amandla(μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Amandla (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms(A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70