I-Polypropylene Snubber Capacitors esetshenziswa ku-voltage ephezulu, izicelo eziphezulu zamanje neziphezulu ze-pulse

I-Polypropylene Snubber Capacitor esetshenziswa ku-voltage ephezulu, izinhlelo zokusebenza zamanje eziphezulu neziphezulu ze-pulse Isithombe Esifakiwe

Incazelo emfushane:

I-Axial Snubber capacitor SMJ-TE

Ama-Snubber Capacitor angama-high-current, high-frequency capacitor anamatheminali axial.I-Axial Film Capacitors iyatholakala e-CRE.Sinikeza ngokusungula, amanani, kanye nemininingwane yedatha ye-Axial Film Capacitors.

1. ISO9001 kanye nesitifiketi se-UL;

2. Uhlu olubanzi;

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Idatha yobuchwepheshe

Ibanga lokushisa elisebenzayo	Ukushisa okuphezulu.Izinga lokushisa elisebenzayo.,Phezulu,ubukhulu: + 85℃Izinga lokushisa eliphezulu: +85℃Izinga lokushisa eliphansi lesigaba: -40℃
ububanzi be-capacitance	0.1μF～5.6μF
I-voltage elinganiselwe	630V.DC～2000V.DC
I-Cap.tol	±5%(J) ;±10%(K)
Melana ne-voltage	1.5Un DC/10S
Isici sokulahla	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Ukumelana ne-insulation	C≤0.33μF RS≥15000 MΩ (ku-20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (ku-20℃ 100V.DC 60S)
Melana nesimangalo samanje
Iminyaka yokuphila	100000h(Un; Θhotspot≤85°C)
Izinga lesithenjwa	I-IEC 61071;IEC 61881;GB/T17702

Isicelo

1. I-IGBT Snubber, i-GTO snubber

2. Umsebenzi oyisisekelo we-snubber ukumunca amandla avela ekusabeleni kumjikelezo wamandla.

3. Isetshenziswa kabanzi kumishini ye-elekthronikhi yamandla lapho i-voltage ephezulu, isiqongo sokuvikela ukumuncwa kwamanje.

Umdwebo wohlaka

I-SMJ-TE Axial Capacitor
Amandla kagesi		Un630V.DC;Urms400Vac;Us 945V
Amandla (uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	I-ESR @100KHz (mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms @25℃ @100KHz (A)
0.22	32	9.5	17.5	0.8	16	23	300	66	5.3
0.33	32	12	20	1	13	22	200	66	6.5
0.47	32	14.5	22.5	1	11	21	220	103.4	8.3
0.68	32	18	26	1	10	20	180	122.4	9.5
1	37	11	19	1	8	28	150	150	7.6
1.5	37	13.5	21.5	1	7	27	150	225	9.5
2	37	16	24	1.2	6	24	130	260	10.2
2.5	37	18	26	1.2	5.5	25	120	300	10.5
3	37	20	28	1.2	5	30	110	330	10.8
3.3	37	21	29	1.2	4.5	30	110	363	11.2
4	57	27	36.5	1.2	4.2	32	220	880	12.8
4.7	57	28	40.5	1.2	3.8	32	200	940	13.8
5.6	57	31	33.5	1.2	3.5	32	185	1036	13.5
6.8	37	29	41.5	1.2	2.5	28	100	680	13.8
6.8	57	34	46.5	1.2	2.8	30	180	1224	14.2
Amandla kagesi		Un 1000V.DC;Urms 500Vac;Us 1500V
Amandla (uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	I-ESR @100KHz (mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms @25℃ @100KHz (A)
0.15	32	10	17.5	0.8	20	20	1100	165	5.5
0.22	32	12	20	1	15	21	1000	220	7.3
0.33	32	15.5	23	1	13	21	1000	330	8.7
0.47	32	18.5	26	1.2	10	23	1000	470	10.5
0.47	44	14	22	1.2	9	24	900	423	9.5
0.68	32	20	32.5	1.2	7	25	900	612	10.8
0.68	44	17	25	1.2	6	26	800	544	10.2
1	44	21.5	29.5	1.2	5.6	27	900	900	11
1.5	44	26	35.5	1.2	5	29	900	1350	12
1.5	57	21	29	1.2	5	30	700	1050	12.2
2	44	28	40.5	1.2	4.8	30	800	1600	13.2
2	57	24	33.5	1.2	4.8	32	600	1200	12.8
2.2	44	30	42.5	1.2	4.2	32	600	1320	13.8
2.2	57	25	34.5	1.2	4.2	32	500	1100	13.5
2.5	57	25	38	1.2	4	33	500	1250	14.2
3	57	28	40.5	1.2	3.5	34	480	1440	15.6
3.3	57	29.5	42	1.2	3.2	35	450	1485	16.5
3.5	57	30.5	43	1.2	3.2	35	450	1575	17.2
4.7	57	35	50.5	1.2	3	36	420	1974	17.8
5.6	57	38.5	65	1.2	2.8	38	400	2240	18.2
Amandla kagesi		Un 1200V.DC;Urms 550Vac;Us 1800V
Amandla (uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	I-ESR @100KHz (mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms @25℃ @100KHz (A)
0.1	32	8.5	16	0.8	20	20	1300	130	6
0.15	32	10	17.5	1	18	20	1200	180	7.5
0.22	32	13	21	1	15	22	1200	264	8.3
0.33	32	16	24	1	12	23	1200	396	9
0.47	32	17.5	30	1.2	10	23	1200	564	9.5
0.47	44	15	23	1.2	9	26	1100	517	9.8
0.68	32	21.5	34	1.2	8	25	1100	517	10
0.68	44	18.5	26.5	1.2	6	27	1000	680	11.7
1	44	23	31	1.2	5	28	1000	1000	12.4
1.5	44	26.5	39	1.2	5	30	950	1425	13.5
1.5	57	22.5	30.5	1.2	5	29	900	1350	12.6
2	44	29	45	1.2	5	30	800	1600	14.2
2	57	26.5	34.5	1.2	4.8	30	750	1500	13.8
2.2	44	31	47	1.2	4.2	32	800	1760	14.5
2.2	57	27.5	35.5	1.2	4.2	35	700	1540	14.5
3	57	29	44.5	1.2	3.2	37	500	1500	17.2
3.3	57	30.5	46	1.2	3.2	38	450	1485	17.8
4.7	57	38	53.5	1.2	3	38	420	1974	18.2
Amandla kagesi		Un 1700V.DC;Urms 600Vac;Us 2550V
Amandla (uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	I-ESR @100KHz (mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms @25℃ @100KHz (A)
0.1	32	9.5	17.5	0.8	18	25	1300	130	7.5
0.15	32	12	20	1	16	24	1200	180	8.5
0.22	32	15	23	1	15	24	1200	264	9.3
0.33	32	18.5	26.5	1	12	22	1200	396	9.9
0.33	44	13.5	21.5	1.2	12	29	1100	363	10.2
0.47	44	16	24	1.2	9	28	1000	470	11.2
0.68	44	20	28	1.2	8	27	1000	680	11.7
1	44	24	33.5	1.2	5.6	26	900	900	12.4
1	57	19.5	27.5	1.2	6	33	850	850	10.8
1.5	44	28	40.5	1.2	4.8	25	800	1200	13.5
1.5	57	24	32	1.2	5	33	750	1125	13.5
2	44	31.5	47	1.2	4.5	24	750	1500	14.2
2	57	27.5	37	1.2	4.8	32	650	1300	12.8
2.2	44	33.5	49	1.2	4.5	34	700	1540	15.6
2.2	57	29	40	1.2	4.2	32	600	1320	14.5
3	57	31	46.5	1.2	4	30	560	1680	17.2
3.3	57	33	48.5	1.2	3.2	29	500	1650	17.6
4	57	37	52.5	1.2	3	28	450	1800	18.2
Amandla kagesi		Un 2000V.DC;Urms 700Vac;Us 3000V
Amandla (uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	I-ESR @100KHz (mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms @25℃ @100KHz (A)
0.068	32	9	17	0.8	25	23	1500	102	6.9
0.1	32	11.5	19.5	1	18	22	1500	150	8.2
0.1	37	10.5	18.5	1	18	26	1450	145	8
0.22	32	17.5	25.5	1.2	15	21	1400	308	9.1
0.22	37	16	24	1.2	15	25	1300	286	9
0.33	37	20	28	1.2	12	24	1250	412.5	9.5
0.33	44	18	26	1.2	12	30	1200	396	10.2
0.47	44	19.5	32	1.2	10	29	1100	517	12.4
0.68	44	24	36.5	1.2	8	28	1000	680	14.2
0.68	57	18.5	31	1.2	8	27	900	612	14.2
1	57	23.5	36	1.2	6	31	950	950	14.5
1.5	57	29.5	42	1.2	5	31	850	1275	14.5
2	57	33	48.5	1.2	4.2	31	750	1500	16.5
2.2	57	35	50.5	1.2	4	30	700	1540	17.8
Amandla kagesi		Un 3000V.DC;Urms 750Vac;Us 4500V
Amandla (uF)	L (mm±1)	T (mm±1)	H (mm±1)	φd (mm)	I-ESR @100KHz (mΩ)	I-ESL(nH)	dv/dt(V/μS)	I-Ipk(A)	I-Irms @25℃ @100KHz (A)
0.047	44	13.5	21.5	1	22	20	2000	94	8.5
0.068	44	17	25	1	20	20	1800	122.4	10.5
0.1	44	20.5	28.5	1.2	18	20	1500	150	12.4
0.15	44	26	34	1.2	16	22	1350	202.5	13.8
0.22	44	29	41.5	1.2	14.5	22	1200	264	14.5